The Union Memory UH810a is a PCIe Gen4 SSD designed for highly available system designs. Supporting the NVMe 1.4 interface with 3D TLC NAND, the UH810a features a range of enterprise-grade protection and reliability features, such as flash-aware RAID, end-to-end data path protection, advanced ECC, secure erase, power-loss protection. It is also powered by a 12nm in-house controller.
This is the first time our StorageReview Labs have seen a product from the Chinese-based company, Union Memory, so we are eager to analyze how it compares to the more well-known and established brands like Intel, Samsung and Memblaze.
The UH810 uses the standard 2.5-inch form factor (SFF-8639 connector) and is designed for scenarios with intensive-read workloads. Union Memory also offers the UH830 series, which is meant for those who have more mixed read/write use cases.
Here’s a quick rundown of the two series with their endurance ratings:
Performance-wise, the UH810a is quoted to deliver sequential reads up to 7,000MB/s for all capacities, while writes are expected to hit up to 3,800MB/s for the 7.68TB model. Random 4K reads and writes can reach up to 160,000 IOPS and 150,000 IOPS, respectively. It also features an MTBF of 2 million hours and has a power consumption of 8.5W (idle) and 21W (active) across all models.
Another interesting feature of the UH810a is its support for online activation of firmware upgrades, which Union Memory indicates only takes 1 second. This means you won’t have to engage a power cycle (i.e., turn it off and then back on) to update the drive, which certainly makes maintenance more seamless and downtime minimal.
Backed by a 5-year warranty, the Union Memory UH810a is available in capacities of 1.92TB, 3.84TB and 7.68TB. We will be looking at the 7.68TB for this review.
Union Memory UH810a Specifications
|UH 810a||UH 830a (for comparison)|
|NAND Flash||3D TLC|
|Sector Size||Support 512/512+8/4096/4096+8 sectors|
|Power Loss protection||Supported|
|Product Upgrade||Supported Through NVMe Commands|
|Sequential Read (128KB, QD32)||7,000MB/s||7,000MBps||7,000MB/s||7,000MB/s||7,000MB/s||7,000MB/s|
|Sequential Write (128KB, QD32)||2,500MB/s||3,800MB/s||3,800MB/s||2,700MB/s||4,200MB/s||4,200MB/s|
|Random ReadIOPS (4KB, QD128)||1,300K||1,600K||1,600K||1500K||1660K||1660K|
|MTBF||2 million hours|
|Data Retention (Power off)||40℃, >3 months|
|Endurance (4K random)||DWPD: ~1||DWPD: ~1||DWPD: ~1||DWPD: ~3||DWPD: ~3||DWPD:~3|
|Service time||5 years (Not exceed the TBW)|
|Bus Interface||PCIe 4.0|
|NVMe Protocol||NVMe 1.4|
|Storage Temperature||– 40℃～85℃|
|Humidity||5％～95％R.H (without condensation)|
|Vibration||Operating：2.17GRMS(5~700HZ), Storage: 3.13GRMS(5~800HZ)|
|Shock||Operating：1000G@0.5ms (Half Sine Wave)
Storage：1000G@0.5ms(Half Sine Wave)
|Power Supply||DC 12V, +/-10%|
|Impulse Current (Max.)||<3A@1s|
|Form Factor||2.5 inches, SF-8200: 69.85×100.2×14.7mm|
|Rated Power (Idle/Active)||8.5/17.5W||8.5/21W||8.5/21W||8.5/17.5W||8.5/21W||8.5/21W|